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QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 1 of 21 - www.qorvo.com product description qorvos QPA1003D is a wide band high power mmic amplifier fabricated on qorvos productio n 0.15um gan on sic process (qga n15). the QPA1003D operates from 1 C 8 ghz and typically provides 1 0 w saturated output pow er with power - added efficiency of 30% and large - signal gain of 25 db. this combination of wideband performance provides the flexibility designers are looking for to improve system performance while reduc ing size and cost. the qpa100 3d is matched to 50? with integrated dc blocking capacitors on both rf i/o ports simplifying system integration. the wide band performance makes it ideally suited in support of test instrumentation and electronic warfare, as we ll as, supporting multiple radar and communication bands. the qpa100 3d is 100% dc and rf tested on - wafer to ensure compliance to electrical specifications. lead - free and rohs compliant. evaluation boards are available upon request. ordering information part no. eccn description QPA1003D 3a 001.b. 2. b.1 1 ? C ? 8 ?ghz 1 0 ?w gan power amplifier functional block diagram product features ? frequency range: 1 ? C ? 8 ? ghz ? p out : 4 0 ? dbm @ p in = 1 5 ? dbm ? pae: 30 ? % @ p in = 1 5 ? dbm ? large signal gain: 25 db @ p in = 1 5dbm ? small signal gain: 30 db ? bias: v d = +2 8 ? v, i dq = 65 0?ma, v g = ?2. 2 ? v typical ? chip dimensions: 3 . 3 x 3.55 x 0.10 ? mm ? process technology: qgan15 performance is typical across frequency. please reference electrical specification table and data plots for more details. applications ? electronic warfare (ew) ? radar ? communications ? test instrumentation 1 4 3 2
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 2 of 21 - www.qorvo.com electrical specifications test conditions unless otherwise noted: 25?c, v d = +28 ?v, i dq = 65 0?ma, v g = ?2. 2?v typical, cw. parameter min typ max units operational frequency range 1 C 8 ghz output power @ p in = 15? dbm frequency = 1 ghz 39.4 C frequency = 4 ghz 40.6 C db m frequency = 8 gh z 40 C power added efficiency @ p in = 15? dbm frequency = 1 ghz 46.8 C % frequency = 4 ghz 34.4 C frequency = 8 gh z 30.4 C small signal gain frequency = 1 ghz 31.5 C db frequency = 4 ghz 32.6 C frequency = 8 ghz 31 C in put return loss frequency = 1 ghz 13.2 C db frequency = 4 ghz 14.7 C frequency = 8 ghz 14.4 C output return loss frequency = 1 ghz 16.7 C db frequency = 4 ghz 11 C frequency = 8 ghz 21 C small signal gain temperature coefficient C - 0.0 4 C db/c output power temperature coefficient C - 0.01 2 C db m /c recommended operating conditions conditio conditions parameter value?/?range drain voltage (v d ) +28 ? v drain current (i dq ) 65 0? ma gate voltage (v g ) ?2.2 ? v (typ.) temperature (t base ) ?40 to 85? c electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions.
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 3 of 21 - www.qorvo.com performanc e plots? C ?large signal (cw) 34 35 36 37 38 39 40 41 42 43 0 1 2 3 4 5 6 7 8 9 p out (dbm) frequency (ghz) p out vs. frequency vs. v d vd=22v vd=25v vd=28v p in = 15 dbm temp. = +25 c i dq = 650 ma cw 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 pae (%) frequency (ghz) pae vs. frequency vs. v d vd=22v vd=25v vd=28v p in = 15 dbm temp. = +25 c i dq = 650 ma cw 0 200 400 600 800 1000 1200 1400 1600 0 1 2 3 4 5 6 7 8 9 drain current (ma) frequency (ghz) drain current vs. frequency vs. v d vd=22v vd=25v vd=28v p in = 15 dbm temp. = +25 c i dq = 650 ma cw -2 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 7 8 9 gate current (ma) frequency (ghz) gate current vs. frequency vs. v d vd=22v vd=25v vd=28v p in = 15 dbm temp. = +25 c i dq = 650 ma cw 34 35 36 37 38 39 40 41 42 43 0 1 2 3 4 5 6 7 8 9 p out (dbm) frequency (ghz) p out vs. frequency vs. i dq idq=435ma idq=650ma p in = 15 dbm temp. = +25 c v d = 28 v cw 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 pae (%) frequency (ghz) pae vs. frequency vs. i dq idq=435ma idq=650ma p in = 15 dbm temp. = +25 c v d = 28 v cw
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 4 of 21 - www.qorvo.com performanc e plots? C ?large signal (cw) 0 200 400 600 800 1000 1200 1400 1600 0 1 2 3 4 5 6 7 8 9 drain current (ma) frequency (ghz) drain current vs. frequency vs. i dq idq=435ma idq=650ma p in = 15 dbm temp. = +25 c v d = 28 v cw -2 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 7 8 9 gate current (ma) frequency (ghz) gate current vs. frequency vs. i dq idq=435ma idq=650ma p in = 15 dbm temp. = +25 c v d = 28 v cw 32 33 34 35 36 37 38 39 40 41 42 43 0 1 2 3 4 5 6 7 8 9 p out (dbm) frequency (ghz) p out vs. frequency vs. p in pin=5dbm pin=10dbm pin=13dbm pin=15dbm pin=16dbm pin=17dbm temp. = + 25 c v d = 28 v, i dq = 650 ma cw 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 pae (%) frequency (ghz) pae vs. frequency vs. p in pin=5dbm pin=10dbm pin=13dbm pin=15dbm pin=16dbm pin=17dbm temp. = +25 c v d = 28 v, i dq = 650 ma cw 0 200 400 600 800 1000 1200 1400 1600 0 1 2 3 4 5 6 7 8 9 drain current (ma) frequency (ghz) drain current vs. frequency vs. p in pin=5dbm pin=10dbm pin=13dbm pin=15dbm pin=16dbm pin=17dbm temp. = + 25 c v d = 28 v, i dq = 650 ma cw -2 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 gate current (ma) frequency (ghz) gate current vs. frequency vs. p in pin=5dbm pin=10dbm pin=13dbm pin=15dbm pin=16dbm pin=17dbm temp. = + 25 c v d = 28 v, i dq = 650 ma cw
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 5 of 21 - www.qorvo.com performanc e plots? C ?large signal (cw) 35 36 37 38 39 40 41 42 43 0 1 2 3 4 5 6 7 8 9 p out (dbm) frequency (ghz) p out vs. frequency vs. temp - 40 c 25 c 85 c cw v d = 28 v, i dq = 650 ma p in = 15 dbm 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 pae (%) frequency (ghz) pae vs. frequency vs. temp - 40 c 25 c 85 c v d = 28 v, i dq = 650 ma cw p in = 15 dbm 0 200 400 600 800 1000 1200 1400 1600 0 1 2 3 4 5 6 7 8 9 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp - 40 c 25 c 85 c v d = 28 v, i dq = 650 ma cw p in = 15 dbm -2 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 7 8 9 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp v d = 28 v, i dq = 650 ma cw - 40 c 25 c 85 c p in = 15 dbm 20 22 24 26 28 30 32 34 36 38 40 42 44 -10 -5 0 5 10 15 20 p out (dbm) p in (dbm) p out vs. p in vs. freq 1ghz 2ghz 4ghz 6ghz 8ghz temp. = + 25 c v d = 28 v, i dq = 650 ma cw 0 5 10 15 20 25 30 35 40 45 50 55 -10 -5 0 5 10 15 20 pae (%) p in (dbm) pae vs. p in vs. freq 1ghz 2ghz 4ghz 6ghz 8ghz temp. = + 25 c v d = 28 v, i dq = 650 ma cw
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 6 of 21 - www.qorvo.com performanc e plots? C ?large signal (cw) 0 200 400 600 800 1000 1200 1400 1600 -10 -5 0 5 10 15 20 drain current (ma) p in (dbm) drain current vs. p in vs. freq 1ghz 2ghz 4ghz 6ghz 8ghz temp. = +25 c v d = 28 v, i dq = 650 ma cw -5 0 5 10 15 20 25 30 -10 -5 0 5 10 15 20 gate current (ma) p in (dbm) gate current vs. p in vs. freq 1ghz 2ghz 4ghz 6ghz 8ghz temp. = + 25 c v d = 28 v, i dq = 650 ma cw 20 22 24 26 28 30 32 34 36 38 40 42 44 -10 -5 0 5 10 15 20 p out (dbm) p in (dbm) p out vs. p in vs. freq 1ghz 2ghz 4ghz 6ghz 8ghz temp. = + 25 c v d = 28 v, i dq = 435 ma cw 0 5 10 15 20 25 30 35 40 45 50 55 -10 -5 0 5 10 15 20 pae (%) p in (dbm) pae vs. p in vs. freq 1ghz 2ghz 4ghz 6ghz 8ghz temp. = + 25 c v d = 28 v, i dq = 435 ma cw 0 200 400 600 800 1000 1200 1400 1600 -10 -5 0 5 10 15 20 drain current (ma) p in (dbm) drain current vs. p in vs. freq 1ghz 2ghz 4ghz 6ghz 8ghz temp. = + 25 c v d = 28 v, i dq = 435 ma cw -5 0 5 10 15 20 25 30 -10 -5 0 5 10 15 20 gate current (ma) p in (dbm) gate current vs. p in vs. freq 1ghz 2ghz 4ghz 6ghz 8ghz temp. = + 25 c v d = 28 v, i dq = 435 ma cw
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 7 of 21 - www.qorvo.com performanc e plots? C ?large signal (cw) 20 22 24 26 28 30 32 34 36 38 40 42 44 -10 -5 0 5 10 15 20 p out (dbm) p in (dbm) p out vs. p in vs. v d 22v 25v 28v temp. = + 25 c i dq = 650 ma cw freq. = 4 ghz 0 5 10 15 20 25 30 35 40 45 -10 -5 0 5 10 15 20 pae (%) p in (dbm) pae vs. p in vs. v d 22v 25v 28v temp. = + 25 c i dq = 650 ma cw freq. = 4 ghz 0 200 400 600 800 1000 1200 1400 1600 -10 -5 0 5 10 15 20 drain current (ma) p in (dbm) drain current vs. p in vs. v d 22v 25v 28v temp. = + 25 c i dq = 650 ma cw freq. = 4 ghz -2 0 2 4 6 8 10 12 14 16 18 20 22 24 -10 -5 0 5 10 15 20 gate current (ma) p in (dbm) gate current vs. p in vs. v d 22v 25v 28v temp. = + 25 c i dq = 650 ma cw freq. = 4 ghz 20 22 24 26 28 30 32 34 36 38 40 42 44 -10 -5 0 5 10 15 20 p out (dbm) p in (dbm) p out vs. p in vs. i dq 435ma 650ma temp. = + 25 c v d = 28 v cw freq. = 4 ghz 0 5 10 15 20 25 30 35 40 -10 -5 0 5 10 15 20 pae (%) p in (dbm) pae vs. p in vs. i dq 435ma 650ma temp. = + 25 c v d = 28 v cw freq. = 4 ghz
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 8 of 21 - www.qorvo.com performanc e plots? C ?large signal (cw) 0 200 400 600 800 1000 1200 1400 1600 -10 -5 0 5 10 15 20 drain current (ma) p in (dbm) drain current vs. p in vs. i dq 435ma 650ma temp. = + 25 c v d = 28 v cw freq. = 4 ghz -2 0 2 4 6 8 10 12 14 16 18 20 22 24 -10 -5 0 5 10 15 20 gate current (ma) p in (dbm) gate current vs. p in vs. i dq 435ma 650ma temp. = + 25 c v d = 28 v cw freq. = 4 ghz 20 22 24 26 28 30 32 34 36 38 40 42 44 -10 -5 0 5 10 15 20 p out (dbm) p in (dbm) p out vs. p in vs. temperature cw freq. = 1 ghz v d = 28 v, i dq = 650 ma - 40 c 25 c 85 c 0 10 20 30 40 50 60 -10 -5 0 5 10 15 20 pae (%) p in (dbm) pae vs. p in vs. temperature cw freq. = 1 ghz v d = 28 v, i dq = 650 ma - 40 c 25 c 85 c 0 200 400 600 800 1000 -10 -5 0 5 10 15 20 drain current (ma) p in (dbm) drain current vs. p in vs. temp cw freq. = 1 ghz v d = 28 v, i dq = 650 ma - 40 c 25 c 85 c -2 0 2 4 6 8 10 12 14 16 18 20 -10 -5 0 5 10 15 20 gate current (ma) p in (dbm) gate current vs. p in vs. temp cw freq. = 1 ghz v d = 28 v, i dq = 650 ma - 40 c 25 c 85 c
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 9 of 21 - www.qorvo.com performanc e plots? C ?large signal (cw) 20 22 24 26 28 30 32 34 36 38 40 42 44 -10 -5 0 5 10 15 20 p out (dbm) p in (dbm) p out vs. p in vs. temperature cw freq. = 4 ghz v d = 28 v, i dq = 650 ma - 40 c 25 c 85 c 0 5 10 15 20 25 30 35 40 -10 -5 0 5 10 15 20 pae (%) p in (dbm) pae vs. p in vs. temperature cw freq. = 4 ghz v d = 28 v, i dq = 650 ma - 40 c 25 c 85 c 0 200 400 600 800 1000 1200 1400 1600 -10 -5 0 5 10 15 20 drain current (ma) p in (dbm) drain current vs. p in vs. temp cw freq. = 4 ghz v d = 28 v, i dq = 650 ma - 40 c 25 c 85 c -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 -10 -5 0 5 10 15 20 gate current (ma) p in (dbm) gate current vs. p in vs. temp cw freq. = 4 ghz v d = 28 v, i dq = 650 ma - 40 c 25 c 85 c 34 35 36 37 38 39 40 41 42 43 1 2 3 4 5 6 7 8 p out (dbm) frequency (ghz) p out vs. frequency vs. v d vd=22v vd=25v vd=28v temp. = + 85 c i dq = 650 ma cw p in = 15 dbm 10 15 20 25 30 35 40 45 50 1 2 3 4 5 6 7 8 pae (%) frequency (ghz) pae vs. frequency vs. v d vd=22v vd=25v vd=28v temp. = + 85 c i dq = 650 ma cw p in = 15 dbm
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 10 of 21 - www.qorvo.com performanc e plots? C ?linearity -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. v d vd=22v vd=25v vd=28v i dq = 650 ma, 1 ghz, 10 mhz tone spacing temp. = +25 c -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. v d vd=22v vd=25v vd=28v i dq = 650 ma, 1 ghz, 10 mhz tone spacing temp. = +25 c -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. v d vd=22v vd=25v vd=28v i dq = 650 ma, 5 ghz, 10 mhz tone spacing temp. = +25 c -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. v d vd=22v vd=25v vd=28v i dq = 650 ma, 5 ghz, 10 mhz tone spacing temp. = +25 c -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. i dq idq=435ma idq=650ma v d = 28 v, 1 ghz, 10 mhz tone spacing temp. = +25 c -90 -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. i dq idq=435ma idq=650ma v d = 28 v, 1 ghz, 10 mhz tone spacing temp. = +25 c
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 11 of 21 - www.qorvo.com performanc e plots? C ?linearity -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. i dq idq=435ma idq=650ma v d = 28 v, 5 ghz, 10 mhz tone spacing temp. = +25 c -90 -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. i dq idq=435ma idq=650ma v d = 28 v, 5 ghz, 10 mhz tone spacing temp. = +25 c -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency 1ghz 2ghz 5ghz 8ghz v d = 28 v, i dq = 650 ma, 10 mhz tone spacing temp. = +25 c -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency 1ghz 2ghz 5ghz 8ghz v d = 28 v, i dq = 650 ma, 10 mhz tone spacing temp. = +25 c -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. temp v d = 28 v, i dq = 650 ma, 5.0 ghz, 10 mhz tone spacing - 40 c +25 c +85 c -90 -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. temp v d = 28 v, i dq = 650 ma, 5.0 ghz, 10 mhz tone spacing - 40 c +25 c +85 c
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 12 of 21 - www.qorvo.com performanc e plots? C ?linearity -50 -40 -30 -20 -10 0 15 20 25 30 35 40 45 2 nd harmonic (dbc) output power @ f 0 (dbm) 2 nd harmonic vs. output power vs. v d 22v 25v 28v temp. = 25?c i dq = 650 ma freq. = 1 ghz -50 -40 -30 -20 -10 0 15 20 25 30 35 40 45 3 rd harmonic (dbc) output power @ f 0 (dbm) 3 rd harmonic vs. output power vs. v d 22v 25v 28v temp. = 25?c i dq = 650 ma freq. = 1 ghz -50 -40 -30 -20 -10 0 15 20 25 30 35 40 45 2 nd harmonic (dbc) output power @ f 0 (dbm) 2 nd harmonic vs. output power vs. v d 22v 25v 28v temp. = 25?c i dq = 650 ma freq. = 5 ghz -50 -40 -30 -20 -10 0 15 20 25 30 35 40 45 3 rd harmonic (dbc) output power @ f 0 (dbm) 3 rd harmonic vs. output power vs. v d 22v 25v 28v temp. = 25?c i dq = 650 ma freq. = 5 ghz -50 -40 -30 -20 -10 0 15 20 25 30 35 40 45 2 nd harmonic (dbc) output power @ f 0 (dbm) 2 nd harmonic vs. output power vs. freq 1ghz 2ghz 5ghz 8ghz temp. = 25?c v d = 28 v, i dq = 650 ma -50 -40 -30 -20 -10 0 15 20 25 30 35 40 45 3 rd harmonic (dbc) output power @ f 0 (dbm) 3 rd harmonic vs. output power vs. freq 1ghz 2ghz 5ghz 8ghz temp. = 25?c v d = 28 v, i dq = 650 ma
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 13 of 21 - www.qorvo.com performance plots? C ? linearity -50 -40 -30 -20 -10 0 15 20 25 30 35 40 45 2 nd harmonic (dbc) output power @ f 0 (dbm) 2 nd harmonic vs. output power vs. temp -40c +25c +85c freq. = 1 ghz v d = 28 v, i dq = 650 ma -50 -40 -30 -20 -10 0 15 20 25 30 35 40 45 3 rd harmonic (dbc) output power @ f 0 (dbm) 3 rd harmonic vs. output power vs. temp -40c +25c +85c freq. = 1 ghz v d = 28 v, i dq = 650 ma -50 -40 -30 -20 -10 0 15 20 25 30 35 40 45 2 nd harmonic (dbc) output power @ f 0 (dbm) 2 nd harmonic vs. output power vs. temp -40c +25c +85c freq. = 5 ghz v d = 28 v, i dq = 650 ma -50 -40 -30 -20 -10 0 15 20 25 30 35 40 45 3 rd harmonic (dbc) output power @ f 0 (dbm) 3 rd harmonic vs. output power vs. temp -40c +25c +85c freq. = 5 ghz v d = 28 v, i dq = 650 ma
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 14 of 21 - www.qorvo.com performance plots? C ?small signal 24 26 28 30 32 34 36 0 1 2 3 4 5 6 7 8 9 10 s 21 (db) frequency (ghz) gain vs. frequency vs. v d 22v 25v 28v temp. = + 25 c i dq = 650 ma 24 26 28 30 32 34 36 0 1 2 3 4 5 6 7 8 9 10 s 21 (db) frequency (ghz) gain vs. frequency vs. i dq 435 ma 650 ma temp. = + 25 c v d = 28 v 24 26 28 30 32 34 36 38 0 1 2 3 4 5 6 7 8 9 10 s 21 (db) frequency (ghz) gain vs. frequency vs. temperature -40c +25c +85c v d = 28 v, i dq = 650 ma -30 -25 -20 -15 -10 -5 0 0 1 2 3 4 5 6 7 8 9 10 s11 (db) frequency (ghz) input return loss vs. freq. vs. temp -40c +25c +85c v d = 28 v, i dq = 650 ma -30 -25 -20 -15 -10 -5 0 0 1 2 3 4 5 6 7 8 9 10 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp -40c +25c +85c v d = 28 v, i dq = 650 ma
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 15 of 21 - www.qorvo.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c, v d = +28 ? v (cw) at i dq = 65 0? ma, p diss = 18.2 ? w 181 c/w channel temperature (t ch ) (quiescent) 5.28 c median lifetime (t m ) 3.5e+8 hrs thermal resistance ( jc ) (1) t base = 85 ? c, v d = +2 5 ? v (cw) at freq = 5.5 ? ghz, p in = 1 5? dbm: i dq = 65 0? ma, i d_drive = 1.2 ? a p out = 39 ? dbm, p diss = 22 ? w 6.05 c/w channel temperature (t ch ) (under rf drive) 218 c median lifetime (t m ) 1.3 e+ 7 hrs thermal resistance ( jc ) (1) t base = 85 ? c, v d = +28 ? v (cw) at freq = 5.5 ? ghz, p in = 15 ? dbm: i dq = 65 0? ma, i d_drive = 1.2 ? a p out = 39 ? dbm, p diss = 2 5 .5 ? w 6.31 c/w channel temperature (t ch ) (under rf drive) 246 c median lifetime (t m ) 1.5 e+6 hrs notes: 1. thermal resist ance measured to back of carrier plate . mmic mounted to 20 mil cumo (75/25) carrier using 1.5 mil ausn . median lifetime test conditions: v d = +28?v; failure criteria = 10? % reduction in i d _max during dc life testing 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) (qgan 15 ) median lifetime vs. t ch fet 16 0 4 8 12 16 20 24 28 32 1 2 3 4 5 6 7 8 p diss (w) frequency (ghz) p diss vs. frequency vs. v d vd=22v vd=25v vd=28v temp. = +85 c i dq = 650 ma cw p in = 15dbm 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 16 18 20 22 24 26 28 jc (c/w) p diss (w) thermal resistance vs. p diss t base = +85 c cw v d = 28 v, i dq = 650 ma
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 16 of 21 - www.qorvo.com bias up procedure 1 . set i d limit to 1.3 ? a, i g limit to 6 ? ma 2. apply ?5? v to v g 3. apply +2 8 ? v to v d ; ensure i dq is approx. 0? ma 4. adjust v g until i dq = 65 0? ma (v g ~ ?2.2 ? v typ.). 5. turn on rf supply bias down procedure 1. turn off rf supply 2. reduce v g to ? 5? v; ensure i dq is approx. 0? ma 3. set v d to 0? v 4. turn off v d supply 5. turn off v g supply applications information and pad layout j1 rf in j2 rf out 1 4 3 2 c6 100//10000 pf v d = 28v, i dq = 650 ma v g = -2.2 v typical r2 5.1 ohm c2 0.01 uf r1 5.1 ohm c1 10 uf r3 5.1 ohm c3 10 uf r4 5.1 ohm c4 0.01 uf c5 100//10000 pf
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 17 of 21 - www.qorvo.com bill of materials reference des. value description manuf. part number c 1 , c 3 10 ? f cap, 1205 , 50? v, 2 0 ? %, x7r various C c 2 , c 4 0.0 1 ? f cap, 0402 , 50? v, 1 0 ? %, x5r various C c5, c6 100 pf /10000 pf cap , 30 x 30, 50v, single layer various C r 1 , r 2 , r 3 , r 4 5. 1? ohm res, 0402, 50 ? v, 5 ? % various C evaluation board (evb) layout assembly
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 18 of 21 - www.qorvo.com mechanical information units: millimeters thickness: 0.10 die x,y size tolerance: 0.050 ground is backside of die bond pad description pad no. symbol pad size (mm) description 1 rf in 0. 097 x 0. 207 rf input; matched to 50??, dc blocked 2 v g 0.1 05 x 0.11 2 gate voltage, bias network is required; see application circuit on page 1 6 as an example. 3 v d 0. 312 x 0. 096 drain voltage, bias network is required; se e application circuit on page 1 6 as an example. 4 rf out 0. 097 x 0. 207 rf output; matched to 50??, dc blocked 2 3 4 1
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 19 of 21 - www.qorvo.com assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low - power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly no tes: ? use ausn (80/20) solder and limit exposure to temperatures above 300 ? ? c to 3? C ? 4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long - term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonic are critical parameters. ? aluminum w ire should not be used. ? devices with small pad sizes should be bonded with 0.0007 - inch wire.
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 20 of 21 - www.qorvo.com absolute maximum ratings parameter value?/?range drain voltage (v d ) +29.5? v gate voltage range (v g ) - 8 to 0? v drain current 130 0 ma forward gate current (i g ) see i g _max plot power dissipation (p diss ), 85 ? c , cw 30 ?w input power, cw, 50? , (p in ) , v d = +28 ?v, i dq = 650 ?ma , 85? c, 18 ?dbm input power, cw, vswr 3:1, (p in ) v d = +2 8 ?v, i dq = 65 0?ma , 85? c 18 ?dbm channel temperature (t ch ) 275?c mounting temperature (30 seconds) 260? c storage temperature - 55 to 150? c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. 0 5 10 15 20 25 30 35 40 45 50 55 60 125 135 145 155 165 175 185 195 205 215 225 maximum gate current (ma) channel temperature ( c) i g_max vs. t ch vs. stage total ig_max stage1 stage2
QPA1003D 1 C ?8?ghz 10?w gan power amplifie r data sheet rev . b july 5 , 2016 - 21 of 21 - www.qorvo.com handling precautions parameter rating standard caution! esd - sensitive device esd? C ?human body model (hbm) tbd esda?/?jedec js - 001 - 2012 solderability compatible with both lead - free (260c max. reflow temp.) and tin/lead (245c max. reflow temp.) soldering processes. solder profiles available upon request. rohs compliance this product is compliant with the 2011/65/eu rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment), as amended by directive 2015/863/eu. this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free ? qorvo green contact information for the latest specifications, additional product information, worldwide sales and distribution locations: tel: 1 - 844 - 890 - 8163 web: www.qorvo.com email: customer.support@qorvo.com for technical questions and application information: email: sjcapplications.engineering@qorvo.com important notice the information contained herein is believed to be reliable; however, qorvo makes no warranties regarding the information con tained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for qorvo products. the information contained herein or any use of such information does not grant, e xplicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin g described by such information. this information does not constitute a warranty with re spect to the products described herein, and qorvo hereby disclaims any and all warranties with respect to such products whether express or implied by law, course of dealing, course of performance, usage of trade or otherwise, including the implied warranti es of merchantability and fitness for a particular purpose. without limiting the generality of the foregoing, qorvo products are not warranted or authorized for use as critical componen ts in medical, life - saving, or life - sustaining applications, or other a pplications where a failure would reasonably be expected to cause severe personal injury or death. copyright 2016 ? qorvo, inc. | qorvo is a registered trademark of qorvo, inc. p b

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